BUW50 silicon npn switching transistor n sgs-thomson preferred salestype n very low saturation voltage and high gain for reduced load operation n turn-on and turn-off tail specifications n turn-on di c /dt for better rectifier choice n switching times specified with and without negative base drive n fast switching times n low switching losses n low on-state voltage drop n base current requirements internal schematic diagram october 1995 absolute maximum ratings symbol parameter value unit v cev collector-emitter voltage (v be = -1.5v) 250 v v ceo collector-emitter voltage (i b = 0) 125 v v ebo emitter-base voltage (i c = 0) 7 v i c collector current 25 a i cm collector peak current 50 a i b base current 6 a i bm base peak current 12 a p base reverse bias base power dissipation (b.e. junction in avalance) 2w p tot total power dissipation at t case 25 o c 150 w t stg storage temperature -65 to 175 o c t j max operating junction temperature 175 o c 1 2 3 to-218 1/5
thermal data r thj-case thermal resistance junction-case max 1 o c/w electrical characteristics (t case = 25 o c unless otherwise specified) symbol parameter test conditions min. typ. max. unit i cer collector cut-off current (r be = 10 w ) v ce = v cev v ce = v cev t c = 100 o c 1 5 ma ma i cev collector cut-off current v ce = v cev v be = -1.5v v ce = v cev v be = - 1.5v t c =100 o c 1 5 ma ma i ebo emitter cut-off current (i c = 0) v eb = 5 v 1 ma v ceo(sus) * collector-emitter sustaining voltage i c = 0.2a l = 25 mh 125 v v eb0 emitter-base voltage (i c = 0) i e = 50 ma 7 v v ce(sat) * collector-emitter saturation voltage i c = 10a i b = 0.5a i c = 20a i b = 2a i c = 10a i b = 0.5a t j = 100 o c i c = 20a i b = 2a t j = 100 o c 0.4 0.6 0.5 0.75 0.8 0.9 0.9 1.5 v v v v v be(sat) * base-emitter saturation voltage i c = 20a i b = 2a i c = 20a i b = 2a t j = 100 o c 1.25 1.25 1.6 1.7 v v di c /d t * rate of rise of on-state collector current v cc = 160v r c = 0 i b1 =3a t j = 25 o c t j = 100 o c 50 45 100 85 a/ m s a/ m s v ce(2 m s) collector-emitter dynamic voltage v cc = 100v r c = 5 w i b1 =2a t j = 25 o c t j = 100 o c 1.4 2.1 3 4 v v v ce(4 m s) collector-emitter dynamic voltage v cc = 100v r c = 5 w i b1 = 2a t j = 25 o c t j = 100 o c 1.1 1.5 2 2.5 v v * pulsed: pulse duration = 300 m s, duty cycle = 2 % BUW50 2/5
electrical characteristics (continued) symbol parameter test conditions min. typ. max. unit t r t s t f resistive load rise time storage time fall time v cc = 100v i c = 24a v bb = -5v i b1 = 3a r b = 0.83 w t p = 30 m s 0.33 0.75 0.15 0.6 1.2 0.3 m s m s m s t s t f t t t c inductive load storage time fall time tail time in turn-on crossover time v cc = 100v v clamp = 125v i c = 20a i b = 2a v bb = -5v r b = 1 . 3 w l c = 0.25mh 0.85 0.09 0.04 0.16 1.4 0.2 0.05 0.3 m s m s m s m s t s t f t t t c storage time fall time tail time in turn-on crossover time vcc = 100v v clamp = 125v i c = 20a i b = 2a v bb = -5v r b = 1 . 3 w l c = 0.25mh t j =100 o c 1.2 0.17 0.07 0.3 1.7 0.3 0.1 0.5 m s m s m s m s t s t f t t storage time fall time tail time in turn-on v cc = 100v v clamp = 125v i c = 20a i b = 2a v bb = 0 r b = 4.7 w l c = 0.25mh 2.1 0.7 0.28 m s m s m s t s t f t t storage time fall time tail time in turn-on v cc = 100v v clamp = 125v i c = 20a i b = 2a v bb = 0 r b = 4.7 w l c = 0.25mh t j =100 o c 3.2 1.2 0.55 m s m s m s * pulsed: pulse duration = 300 m s, duty cycle = 2 % BUW50 3/5
dim. mm inch min. typ. max. min. typ. max. a 4.7 4.9 0.185 0.193 c 1.17 1.37 0.046 0.054 d2.5 0.098 e 0.5 0.78 0.019 0.030 f 1.1 1.3 0.043 0.051 g 10.8 11.1 0.425 0.437 h 14.7 15.2 0.578 0.598 l2 C 16.2 C 0.637 l3 18 0.708 l5 3.95 4.15 0.155 0.163 l6 31 1.220 r C 12.2 C 0.480 ? 4 4.1 0.157 0.161 r a c d e h f g l6 l3 l2 l5 1 2 3 to-218 (sot-93) mechanical data p025a BUW50 4/5
information furnished is believed to be accurate and reliable. however, sgs-thomson microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. no license is granted by implication or otherwise under any patent or patent rights of sgs-thomson microelectronics. specification s mentioned in this publication are subject to change without notice. this publication supersedes and replaces all information previously s upplied. sgs-thomson microelectronics products are not authorized for use as critical components in life support devices or systems with out express written approval of sgs-thomson microelectonics. ? 1995 sgs-thomson microelectronics - all rights reserved sgs-thomson microelectronics group of companies australia - brazil - france - germany - hong kong - italy - japan - korea - malaysia - malta - morocco - the netherlands - singapore - spain - sweden - switzerland - taiwan - thailand - united kingdom - u.s.a . . . BUW50 5/5
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